Medium power silicon junction diode
- Made:
- circa 1950 in United Kingdom
Medium power silicon junction diode c1950
Details
- Category:
- Electronic Components
- Object Number:
- 2003-114
- Materials:
- metal, silicon
- Measurements:
-
: 10 x 80 x 40 mm
- type:
- semi conductor
- credit:
- GEC Hirst Research Centre